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3N60

nELL
Part Number 3N60
Manufacturer nELL
Description N-Channel Power MOSFET
Published Jul 11, 2016
Detailed Description SEMICONDUCTOR 3N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (3A, 600Volts) DESCRIPTION The Nell...
Datasheet PDF File 3N60 PDF File

3N60
3N60

Overview
SEMICONDUCTOR 3N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (3A, 600Volts) DESCRIPTION The Nell 3N60 is a three-terminal silicon device with current conduction capability of 3A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max.
threshold voltage of 4 volts.
They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications.
FEATURES RDS(ON) = 3.
6Ω@VGS = 10V Ultra low gate charge(13nC max.
) Low reverse transfer capacitance (CRSS = 5.
5pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-251 (I-PAK) (3N60F) D D G S TO-252 (D-PAK) (3N60G) GDS TO-220AB (3N60A) GDS TO-220F (3N60AF) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max.
3 600 3.
6 @ VGS = 10V 13 D (Drain) G (Gate) S (Source) www.
nellsemi.
com Page 1 of 9 SEMICONDUCTOR 3N60 Series RRooHHSS Nell High Power Products ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS VDSS Drain to Source voltage TJ=25°C to 150°C VDGR Drain to Gate voltage RGS=20KΩ VGS ID IDM IAR EAR EAS dv/dt Gate to Source voltage Continuous Drain Current Pulsed Drain current(Note 1) Avalanche current(Note 1) Repetitive avalanche energy(Note 1) Single pulse avalanche energy (Note 2) Peak diode recovery dv/dt(Note 3) TC=25°C TC=100°C IAR=3A, RGS=50Ω, VGS=10V IAS=3A, L = 64mH TO-251/ TO-252 PD Total power dissipation TC=25°C TO-220AB TO-220F TJ TSTG Operation junction temperature Storage temperature TL Maximum soldering temperature, for 10 seconds 1.
6mm from case Mounting torque, #6-32 or M3 screw VALUE UNIT 600 600 V ±30 3 1.
86 12 A 3 7.
5 mJ 200 4.
5 V /ns 50 75 W 34 -55 to 150 -55 to 150 ºC 300 10 (1.
1) lbf.
in (N.
m) Note: 1.
Repetitive rating: pulse width limited by junction temperature.
2.
IAS = ...


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