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MXP4004CT

MaxPower Semiconductor
Part Number MXP4004CT
Manufacturer MaxPower Semiconductor
Description N-Channel MOSFET
Published Jul 13, 2016
Detailed Description N-Channel MOSFET Applications: ● Power Supply ● DC-DC Converters MXP4004CT Datasheet VDSS 40V RDS(ON)(MAX) 4mΩ ID 12...
Datasheet PDF File MXP4004CT PDF File

MXP4004CT
MXP4004CT

Overview
N-Channel MOSFET Applications: ● Power Supply ● DC-DC Converters MXP4004CT Datasheet VDSS 40V RDS(ON)(MAX) 4mΩ ID 126 Features: ● Lead Free ● Low RDS(ON) to Minimize Conductive Loss ● Low Gate Charge for Fast Switching Application ● Optimized BVDSS Capability Ordering Information Park Number Package MXP4004CT TO-220 Brand MXP Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS Drain-to-Source Voltage 40 ID Continuous Drain Current 126 IDM Pulsed Drain Current @VG=10V 504 PD Power Dissipation Derating Factor above 25℃ 150 1.
00 VGS Gate-to-Source Voltage +/-20 EAS Single Pulse Avalanche Energy (L=11.
9mH, IAS=9A) 773 IAS Pulsed Avalanche Energy Figure 7 TJ and TSTG Operating Junction and Storage Temperature Range -55 to 175 *Calculated continuous current based upon maximum allowable junction temperature, +175℃ Unit V A W W/℃ V mJ A ℃ Thermal Resistance Symbol Parameter RθJC Junction-to-Case RθJA Junction-to-Ambient Min Typ Max Unit Test Conditions Water cooled heatsink, PD 1.
00 ℃/W adjusted for a peak junction Temperature of 175℃ 62 1 cubic foot chanber, free air ©MaxPower Semiconductor Inc.
Page1 MXP4004CT Ver 1.
0 Jan.
2011 OFF Characteristics Symbol Parameter BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage TJ=25℃ unless otherwise specified Min Typ Max Unit Test Conditions 40 V VGS=0V, ID=250uA 1 100 uA VDS=32V, VGS=0V VDS=32V, VGS=0V, TJ=125 ℃ 100 100 nA VGS=+20V VGS= -20V ON Characteristics Symbol Parameter RDS(ON) Static Drain-to-Source On-Resistance VGS(TH) Gate Threshold Voltage.
TJ=25℃ unless otherwise specified Min Typ Max Unit Test Conditions 4 mΩ VGS=10V, ID=24A 2 4 V VGS=VDS, ID=250uA Dynamic Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-to-Source Ch...


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