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30N05

Inchange Semiconductor
Part Number 30N05
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
Published Jul 24, 2016
Detailed Description INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 30N05 ·FEATURES ·Drain Current ID= 30...
Datasheet PDF File 30N05 PDF File

30N05
30N05

Overview
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 30N05 ·FEATURES ·Drain Current ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.
05Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 50 ±30 V V ID Drain Current-Continuous 30 A PD Total Dissipation @TC=25℃ 105 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.
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cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 30N05 ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current CONDITIONS VGS= 0; ID=250µA VDS= VGS; ID=250µA IS= 30A ;VGS= 0 VGS= 10V; ID= 15A VGS= ±30V;VDS= 0 VDS=50V; VGS= 0 MIN TYPE MAX UNIT 50 V 2.
0 4.
0 V 1.
5 V 0.
05 Ω ±100 nA 200 µA isc website：www.
iscsemi.
cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.
fineprint.
cn ...


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