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30N06

UTC
Part Number 30N06
Manufacturer UTC
Description N-CHANNEL POWER MOSFET
Published Apr 2, 2007
Detailed Description www.DataSheet4U.com UNISONIC TECHNOLOGIES CO., LTD 30N06 30 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 MOSFET DESCRIPTIO...
Datasheet PDF File 30N06 PDF File

30N06
30N06

Overview
www.
DataSheet4U.
com UNISONIC TECHNOLOGIES CO.
, LTD 30N06 30 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 MOSFET DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche characteristics.
This power MOSFET is usually used at automotive applications in power supplies, high efficient DC to DC converters and battery operated products.
TO-220 1 TO-220F FEATURES * RDS(ON) = 40mΩ@VGS = 10 V * Ultra low gate charge ( typical 20 nC ) * Low reverse transfer Capacitance ( CRSS = typical 80 pF ) * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability *Pb-free plating product number: 30N06L SYMBOL 2.
Drain 1.
Gate 3.
Source ORDERING INFORMATION Order Number Package Normal Lead Free Plating 30N06-TA3-T 30N06L-TA3-T TO-220 30N06-TF3-T 30N06L-TF3-T TO-220F Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 G D S G D S Packing Tube Tube 30N06L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube, R: Tape Reel (2) TA3: TO-220, TF3: TO-220F (3) L: Lead Free Plating , Blank: Pb/Sn www.
unisonic.
com.
tw Copyright © 2005 Unisonic Technologies Co.
, Ltd 1 of 8 QW-R502-087,A 30N06 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate to Source Voltage SYMBOL VDSS VGSS MOSFET RATINGS UNIT 60 V ±20 V TC = 25 30 A Continuous Drain Current ID TC = 100 21.
3 A Pulsed Drain Current (Note 1) IDM 120 A Avalanche Energy, Single Pulsed (Note 2) EAS 300 mJ Repetitive Avalanche Energy (Note 1) EAR 8 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 7.
5 V/ns Total Power Dissipation (TC = 25 ) 80 W PD 0.
53 W/ Derating Factor Above 25 Operation Junction Temperature TJ -55 ~ +150 Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not i...


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