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IRFW634A

Fairchild Semiconductor
Part Number IRFW634A
Manufacturer Fairchild Semiconductor
Description Power MOSFET
Published Aug 4, 2016
Detailed Description $GYDQFHG 3RZHU 026)(7 IRFW/I634A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input C...
Datasheet PDF File IRFW634A PDF File

IRFW634A
IRFW634A

Overview
$GYDQFHG 3RZHU 026)(7 IRFW/I634A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.
) @ VDS = 250V ♦ Lower RDS(ON): 0.
327Ω(Typ.
) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt Total Power Dissipation (TA=25°C) * Total Power Dissipation (TC=25°C) Linear Derating Factor (3) Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8 from case for 5-seconds BVDSS = 250 V RDS(on) = 0.
45Ω ID = 8.
1 A D2-PAK I2-PAK 2 1 3 1 2 3 1.
Gate 2.
Drain 3.
Source Value 250 8.
1 5.
1 32 ±30 205 8.
1 7.
4 4.
8 ...


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