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IRFW630B

Fairchild Semiconductor
Part Number IRFW630B
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Dec 2, 2013
Detailed Description IRFW630B / IRFI630B IRFW630B / IRFI630B 200V N-Channel MOSFET General Description These N-Channel enhancement mode powe...
Datasheet PDF File IRFW630B PDF File

IRFW630B
IRFW630B

Overview
IRFW630B / IRFI630B IRFW630B / IRFI630B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
Features • • • • • • 9.
0A, 200V, RDS(on) = 0.
4Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 22 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ● ◀ ▲ ● ● G S D2-PAK IRFW Series G D S I2-PAK IRFI Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuo...


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