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IRFW630B

ON Semiconductor
Part Number IRFW630B
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Jan 23, 2023
Detailed Description IRFW630B — N-Channel MOSFET IRFW630B N-Channel MOSFET 200 V, 9 A, 400 mΩ Features Description These N-Channel enhanc...
Datasheet PDF File IRFW630B PDF File

IRFW630B
IRFW630B

Overview
IRFW630B — N-Channel MOSFET IRFW630B N-Channel MOSFET 200 V, 9 A, 400 mΩ Features Description These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductors proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
• 9.
0 A, 200 V, RDS(on) = 400 mΩ (Max.
) @ VGS = 10 V, ID = 4.
5 A • Low Gate Charge (Typ.
22 nC) • Low Crss (Typ.
22 pF) • 100% Avalanche Tested D D G S D2-PAK G Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol Parameter VDSS ID Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM VGSS EAS IAR EAR dv/dt Drain Current - Puls...


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