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IRFP460

Fairchild Semiconductor
Part Number IRFP460
Manufacturer Fairchild Semiconductor
Description Power MOSFET
Published Aug 4, 2016
Detailed Description $GYDQFHG 3RZHU 026)(7 IRFP460 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capa...
Datasheet PDF File IRFP460 PDF File

IRFP460
IRFP460

Overview
$GYDQFHG 3RZHU 026)(7 IRFP460 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.
) @ VDS = 500V ♦ Lower RDS(ON): 0.
197Ω (Typ.
) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt (3) Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8 from case for 5-seconds Thermal Resistance Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient BVDSS = 500 V RDS(on) = 0.
25Ω ID = 22 A TO-3P 1 2 3 1.
Gate 2.
Drain ...


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