DatasheetsPDF.com

IRF620

Inchange Semiconductor
Part Number IRF620
Manufacturer Inchange Semiconductor
Description N-Channel Mosfet Transistor
Published Aug 6, 2016
Detailed Description INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast ...
Datasheet PDF File IRF620 PDF File

IRF620
IRF620



Overview
INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements isc Product Specification IRF620 ·DESCRITION ·Designed for high speed applications, such as switching power supplies , AC and DC motor controls,relay and solenoid drivers and other pulse.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 200 ±20 V V ID Drain Current-Continuous 5A IDM Drain Current-Single Plused 20 A PD Total Dissipation @TC=25℃ 40 W Tj Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient 3.
12 80 ℃/W ℃/W isc website:www.
iscsemi.
cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.
fineprint.
cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF620 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.
25mA VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VDS= VGS; ID= 0.
25mA VGS= 10V; ID= 2.
5A VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 200V; VGS=0 VSD Forward On-Voltage IS= 5A; VGS=0 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=25V,VGS=0V, F=1.
0MHz MIN MAX UNIT 200 V 24V 0.
8 Ω ±500 nA 250 uA 1.
8 V 600 pF 300 pF 80 pF ·SWITCHING CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS Td(on) Turn-on Delay Time Tr Rise Time Td(off) Turn-off Delay Time VDD=100V,ID=5.
0A VGS=10V,RGEN=9.
1Ω RGS=9.
1Ω Tf Fall Time MIN TYP MAX UNIT 40 ns 60 ns 100 ns 60 ns isc website:www.
iscsemi.
cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.
fineprint.
cn ...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)