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K3758

Toshiba Semiconductor
Part Number K3758
Manufacturer Toshiba Semiconductor
Description Silicon N Channel MOS Type Field Effect Transistor
Published Aug 11, 2016
Detailed Description 2SK3758 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) 2SK3758 Switching Regulator Applications u...
Datasheet PDF File K3758 PDF File

K3758
K3758

Overview
2SK3758 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) 2SK3758 Switching Regulator Applications unit • Low drain-source ON resistance: RDS (ON) = 1.
35 (typ.
) • High forward transfer admittance: |Yfs| = 3.
5S (typ.
) • Low leakage current: IDSS = 100 A (VDS = 500 V) • Enhancement-mode: V th = 2.
0~4.
0 V (V DS = 10 V, ID = 1 mA) /Circuit Maximum Ratings (Ta = 25°C) 1155.
.
66mamx.
ax 2.
7 3.
84 0.
2 3.
84 0.
2 101.
05.
5mmaax x 44.
.
77mmaxax 1.
3 1.
3 6.
6.
66 mmaxa.
x Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID ID P PD EA S IAR EAR Tc h Tstg Rating 500 500 ±30 5 20 58 12 5 5.
8 150 -55~150 Unit V V V W mJ A mJ °C °C 131.
3.
44 mimin.
n 3.
9 max 3 .
9 max.
11.
.
55mmaxax 0.
81 0.
81 max 00.
.
4455 2.
25.
544 123 2.
7 2.
7 1.
Gate 2.
Drain(HEAT SINK) 3.
Source JEDEC SC-46 JEITA TO-220AB Thermal Characteristics TOSHIBA Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max Unit 2.
16 °C/W 83.
3 °C/W Weight : 2.
0g(typ.
) 2 Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 0.
82 mH, IAR = 5 A, RG = 25 Ω 1 Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device.
Please handle with caution.
3 1 2004-02-26 2SK3758 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Switching time Turn-on time Fa...


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