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K3715

NEC
Part Number K3715
Manufacturer NEC
Description 2SK3715
Published Aug 22, 2014
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR www.DataSheet4U.com 2SK3715 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The ...
Datasheet PDF File K3715 PDF File

K3715
K3715

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR www.
DataSheet4U.
com 2SK3715 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3715 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION PART NUMBER 2SK3715 PACKAGE Isolated TO-220 FEATURES • Super low on-state resistance RDS(on)1 = 6.
0 mΩ MAX.
(VGS = 10 V, ID = 38 A) RDS(on)2 = 9.
5 mΩ MAX.
(VGS = 4 V, ID = 38 A) • Low C iss: C iss = 8400 pF TYP.
• Built-in gate protection diode (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 60 ±20 ±75 ±300 40 2.
0 150 −55 to +150 67 450 V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1.
PW ≤ 10 µs, Duty Cycle ≤ 1% 2.
Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country.
Please check with an NEC Electronics sales representative for availability and additional information.
Document No.
D16378EJ2V0DS00 (2nd edition) Date Published August 2003 NS CP(K) Printed in Japan The mark shows major revised points.
2002 2SK3715 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS www.
DataSheet4U.
com Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 TEST CONDITIONS VDS = 60 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 38 A VGS = 10 V, ID = 38 A VGS = 4 V, ID = 38 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 30 V, ID = 38 A VGS = 10 V RG = 0 Ω MI...


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