DatasheetsPDF.com

K3713

NEC
Part Number K3713
Manufacturer NEC
Description 2SK3713
Published Apr 6, 2009
Detailed Description www.datasheet4u.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3713 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The...
Datasheet PDF File K3713 PDF File

K3713
K3713

Overview
www.
datasheet4u.
com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3713 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3713 is N-channel MOS Field Effect Transistor designed for high voltage and high speed switching applications.
ORDERING INFORMATION PART NUMBER 2SK3713-SK PACKAGE TO-262 FEATURES • Super high VGS(off): VGS(off) = 3.
8 to 5.
8 V • Low Crss: Crss = 6.
5 pF TYP.
• Low QG: QG = 25 nC TYP.
• Low on-state resistance: RDS(on) = 0.
83 Ω MAX.
(VGS = 10 V, ID = 5 A) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 600 ±30 ±10 ±35 100 1.
5 150 −55 to +150 10 6 V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1.
PW ≤ 10 µs, Duty Cycle ≤ 1% 2.
Starting Tch = 25°C, VDD = 100 V, L = 100 µH, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country.
Please check with an NEC Electronics sales representative for availability and additional information.
Document No.
D16588EJ1V0DS00 (1st edition) Date Published September 2003 NS CP(K) Printed in Japan 2003 www.
datasheet4u.
com 2SK3713 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD TEST CONDITIONS VDS = 600 V, VGS = 0 V VGS = ±30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 5 A VGS = 10 V, ID = 5 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 150 V, ID = 5 A VGS = 10 V RG = 10 Ω MIN.
TYP.
MAX.
100 ±100 UNIT ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)