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K3700

Toshiba Semiconductor
Part Number K3700
Manufacturer Toshiba Semiconductor
Description 2SK3700
Published Sep 1, 2015
Detailed Description 2SK3700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ) 2SK3700 Switching Regulator Applications U...
Datasheet PDF File K3700 PDF File

K3700
K3700

Overview
2SK3700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ) 2SK3700 Switching Regulator Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 2.
0 Ω (typ.
) • High forward transfer admittance: |Yfs| = 4.
5 S (typ.
) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement model: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc=25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg 900 900 ±30 5 15 150 351 5 15 150 −55 to150 V V V A W mJ A mJ °C °C 1.
GATE 2.
DRAIN (HEAT SINK) 3.
SOURCE JEDEC ― JEITA ― TOSHIBA 2-16C1B Weight: 4.
6 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch-c) Rth (ch-a) 0.
833 50 °C/W °C/W Note 1: Ensure that the temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 25.
7mH, RG = 25 Ω, IAR = 5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device...


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