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BUT11AI

Part Number	BUT11AI
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Aug 12, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for rob...
Datasheet	BUT11AI PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 100 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER ...

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