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BUX45

Part Number	BUX45
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Aug 12, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.) @ IC= 1A ·High S...
Datasheet	BUX45 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.
0V(Max.
) @ IC= 1A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed, high voltage, high power applications.
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCEX VCER VCEO Collector-Base Voltage Collector-Emitter Voltage VBE= -1.
5V Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Tem...

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