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NTE2634

Part Number	NTE2634
Manufacturer	NTE
Description	Complementary Silicon Transistors
Published	Aug 18, 2016
Detailed Description	NTE2633 (NPN) & NTE2634 (PNP) Silicon Complementary Transistors High Frequency Video Driver Description: The NTE2633 (N...
Datasheet	NTE2634 PDF File

Overview

NTE2633 (NPN) & NTE2634 (PNP) Silicon Complementary Transistors High Frequency Video Driver Description: The NTE2633 (NPN) and NTE2634 (PNP) are silicon complementary epitaxial transistor in a TO126 type package designed for use in the buffer stage of the driver for high–resolution color graphics monitors.
Features: D High Breakdown Voltage D Low Output Capacitance Absolute Maximum Ratings: Collector–Base Voltage, VCBO .
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115V Collector–Emitter Voltage, VCEO .
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95V Collector–Emitter Voltage (RBE = 100Ω), VCER .
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110V Emitter–Base Voltage, VEBO .
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3V DC Collector Current, IC .
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300mA Total Power Dissipation (TS ≤ +115°C, Note 1), Ptot .
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3W Operating Junction Temperature, TJ .
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+175°C Storage Temperature Range, Tstg .
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–65° to +175°C Thermal Resistance, Junction–to–Soldering Point (TS ≤ +115°C, Note 1), RthJS .
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20K/W Note 1.
TS is the temperature at the soldering point of the collector lead.
Electrical Characteristics: (TJ = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector–Base Breakdown Voltage V(BR)CBO IC = 0.
1mA 115 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA 95 – – V V(BR)CER IC = 10mA, RBE = 100Ω 110 – – V Emitter–Base Breakdown ...

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