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NTE2636

NTE
Part Number NTE2636
Manufacturer NTE
Description Silicon NPN Transistor
Published May 9, 2005
Detailed Description NTE2636 Silicon NPN Transistor Horizontal Deflection w/Internal Damper Diode Features: D High Breakdown Voltage: VCES = ...
Datasheet PDF File NTE2636 PDF File

NTE2636
NTE2636

Overview
NTE2636 Silicon NPN Transistor Horizontal Deflection w/Internal Damper Diode Features: D High Breakdown Voltage: VCES = 1500V D Built–In Damper Diode D Isolated TO3PFM Type Package Applications: D TV/Character Display Horizontal Deflection Output Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCES .
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1500V Emitter–Base Voltage, VEBO .
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6V Collector Current, IC .
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8A Collector Peak Current, IC(peak) .
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9A Collector Surge Current, IC(surge) .
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18A Collector–Emitter Diode Forward Current, ID .
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8A Collector Power Dissipation (TC = +25°C), PC .
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50W Operating Junction Temperature, TJ .
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+150°C Storage Temperature Range, Tstg .
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–55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Emitter–Base Breakdown Voltage Collector Cutoff Current DC Current Transfer Ratio Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Collector–Emitter Diode Forward Voltage Fall Time Symbol Test Conditions Min 6 – – – – – – Typ – – – – – – – Max – 500 25 5 1.
5 2.
0 0.
5 V V V µs Unit V µA V(BR)EBO IE = 500mA, IC = 0 ICES hFE...


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