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MMBT3904LT1

Tuofeng Semiconductor
Part Number MMBT3904LT1
Manufacturer Tuofeng Semiconductor
Description NPN Transistor
Published Aug 25, 2016
Detailed Description Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1 TRANSISTOR (NPN) ...
Datasheet PDF File MMBT3904LT1 PDF File

MMBT3904LT1
MMBT3904LT1

Overview
Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd SOT-23 Plastic-Encapsulate Transistors MMBT3904LT1 TRANSISTOR (NPN) FEATURES SOT-23 1.
BASE 2.
EMITTER 3.
COLLECTOR Power dissipation PCM: 0.
2 W (Tamb=25℃) Collector current ICM: 0.
2 Collector-base voltage A V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 2.
9 1.
9 0.
95 0.
95 1.
0 2.
4 1.
3 Unit: mm 0.
4 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Delay Time Rise Time Storage Time Fall Time DEVICE MARKING MMBT3904LT1=1AM Symbol Test conditions MIN MAX UNIT V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE(1) HFE(2) VCE(sat) VBE(sat) fT td tr ts tf Ic= 100 µA, IE=0 Ic= 1 mA, IB=0 IE= 100µA, IC=0 VCB= 60V, IE=0 VCE= 40V, IB=0 VEB= 5V, IC=0 VCE=1V, IC= 10mA VCE= 1V, IC= 50mA IC=50mA, IB= 5mA IC= 50mA, IB= 5mA VCE= 20V, IC= 10mA f=100MHz VCC=3.
0Vdc, VBE=-0.
5Vdc IC=10mAdc, IB1=1.
0mAdc VCC=3.
0Vdc, IC=10mAdc IB1=IB2=1.
0mAdc 60 40 6 100 60 250 0.
1 0.
1 0.
1 300 0.
3 0.
95 35 35 200 50 V V V µA µA µA V V MHz nS nS nS nS Typical Characterisitics MMBT3904LT1 COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 100 80 60 40 20 0 0 600 300 100 Static Characteristic 500uA 450uA 400uA COMMON EMITTER Ta=25℃ 350uA 300uA 250uA 200uA 150uA 100uA IB=50uA 4 8 12 16 COLLECTOR-EMITTER VOLTAGE VCE (V) 20 V —— I CEsat C Ta=100℃ Ta=25℃ 30 10 13 10 30 100 COLLECTOR CURRENT IC (mA) I —— V 100 C BE COMMON EMITTER VCE=1V 30 Ta=100℃ 10 β=10 200 3 Ta=25℃ 1 0.
3 0.
1 0.
0 0.
2 0.
4 0.
6 0.
8 BASE-EMMITER VOLTAGE VBE (V) 300 VCE=20V Ta=25 oC f —— I TC 1.
0 200 100 1 3 10 COLLECTOR CURRENT IC (mA) 30 60 COLLECTOR POWER DISSIPATION ...


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