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MMBT3904LT1

Silicon Standard
Part Number MMBT3904LT1
Manufacturer Silicon Standard
Description NPN Transistor
Published Aug 25, 2016
Detailed Description FEATURES „ Power dissipation, PCM:0.2W (Tamb=25℃) „ Collector current, ICM: 0.2A „ Collector-base voltage, V(BR)CBO: 60V...
Datasheet PDF File MMBT3904LT1 PDF File

MMBT3904LT1
MMBT3904LT1

Overview
FEATURES „ Power dissipation, PCM:0.
2W (Tamb=25℃) „ Collector current, ICM: 0.
2A „ Collector-base voltage, V(BR)CBO: 60V „ Operating and storage junction temperature range: TJ, Tstg: -55℃ to +150℃ „ SOT-23 plastic-encapsulate package Device Marking: AM1 MMBT3904LT1 Transistors (NPN) ELECTRICAL CHARACTERISTICS Parameter Symbol Test Conditions Collector-base breakdown voltage V(BR)CBO Ic= 100 µA, IE=0 Collector-emitter breakdown voltage V(BR)CEO VIc= 1 mA, IB=0 Min 60 Max 40 Unit V V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 6 V Collector cut-off current ICBO VCB= 60V, IE=0 0.
1 µA Collector cut-off current ICEO VCE= 40V, IB=0 0.
1 µA Emitter cut-off current IEBO VEB= 5V, IC=0 0.
1 µA DC current gain HFE(1) VCE=10V, IC= 1mA 100 HFE(2) VCE= 1V, IC= 50mA 60 300 Collector-emitter saturation voltage VCE(sat) IC=50mA, IB= 5mA 0.
3 V Base-emitter saturation voltage VBE(sat) IC= 50mA, IB= 5mA 0.
95 V Transition frequency fT VCE= 20V, IC= 10mA 250 f=100MHz MHz Delay Time td VCC=3.
0Vdc,VBE=0.
5Vdc 35 nS Rise Time tr IC=10mAdc,IB1=1.
0mAdc 35 nS Storage Time ts VCC=3.
0Vdc, IC=10mAdc 200 nS Fall Time tf IB1=IB2=1.
0mAdc 50 nS Note: Unless otherwise specified, these specifications apply over the operating ambient temperature of 25℃.
12/16/2006 Rev.
1.
00 www.
SiliconStandard.
com 1 MMBT3904LT1 Disclaimer Information furnished by Silicon Standard Corporation is believed to be accurate and reliable.
However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use.
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