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MMBTH10LT1

Tuofeng Semiconductor
Part Number MMBTH10LT1
Manufacturer Tuofeng Semiconductor
Description NPN Transistor
Published Aug 25, 2016
Detailed Description Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBTH10LT1 TRANSISTOR (NPN) F...
Datasheet PDF File MMBTH10LT1 PDF File

MMBTH10LT1
MMBTH10LT1


Overview
Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd SOT-23 Plastic-Encapsulate Transistors MMBTH10LT1 TRANSISTOR (NPN) FEATURES SOT-23 1.
BASE 2.
EMITTER 3.
COLLECTOR Power dissipation PCM: 0.
225 W (Tamb=25℃) Collector current ICM: 0.
05 Collector-base voltage A V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 2.
9 1.
9 0.
95 0.
95 1.
0 2.
4 1.
3 Unit: mm 0.
4 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Test conditions Ic= 100µA, IE=0 Ic= 1 mA, IB=0 IE= 10µA, IC=0 VCB=25V, IE=0 VEB= 2V, IC=0 MIN 30 25 3 DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency hFE(1) VCE(sat) VBE(on) fT VCE=10V, IC= 4mA IC=4 mA, IB= 0.
4mA VCE= 10V, IC= 4mA VCE=10V, IC= 4mA f=100MHz 60 650 MAX UNIT V V V 0.
1 µA 0.
1 µA 0.
5 V 0.
95 V MHz DEVICE MARKING MMBTH10LT1=3EM ...


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