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MMBTH10LT1

Motorola
Part Number MMBTH10LT1
Manufacturer Motorola
Description VHF/UHF Transistor
Published May 9, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBTH10LT1/D VHF/UHF Transistor MMBTH10LT1 COLLECTOR 3 ...
Datasheet PDF File MMBTH10LT1 PDF File

MMBTH10LT1
MMBTH10LT1

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBTH10LT1/D VHF/UHF Transistor MMBTH10LT1 COLLECTOR 3 1 BASE 3 Motorola Preferred Device NPN Silicon 2 EMITTER 1 2 CASE 318-08, STYLE 6 SOT-23 (TO-236AB) MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Symbol VCEO VCBO VEBO Value 25 30 3.
0 Unit Vdc Vdc Vdc DEVICE MARKING MMBTH10LT1 = 3EM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.
8 RθJA PD 556 300 2.
4 RθJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 1.
0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 25 Vdc, IE = 0) Emitter Cutoff Current (VEB = 2.
0 Vdc, IC = 0) 1.
FR–5 = 1.
0 x 0.
75 x 0.
062 in.
2.
Alumina = 0.
4 x 0.
3 x 0.
024 in.
99.
5% alumina V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 25 30 3.
0 — — — — — — — — — — 100 100 Vdc Vdc Vdc nAdc nAdc Symbol Min Typ Max Unit Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Transistors, FETs and Diodes Device Data © Motorola, Small–Signal Inc.
1997 1 MMBTH10LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic ON CHARACTERISTICS DC Current Gain (IC = 4.
0 mAdc, VCE = 10 Vdc) Collector–Emitter Saturation Voltage (IC = 4.
0 mAdc, IB = 0.
4 mAdc) Base–Emitter On Voltage (IC = 4.
0 mAdc, VCE = 10 Vdc) SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product (IC = 4.
0 mAdc, VCE = 10 Vdc,...


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