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MMBTH10LT1

ON
Part Number MMBTH10LT1
Manufacturer ON
Description VHF/UHF Transistor
Published May 9, 2005
Detailed Description MMBTH10LT1, MMBTH10−4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM Device Marking: Feature...
Datasheet PDF File MMBTH10LT1 PDF File

MMBTH10LT1
MMBTH10LT1


Overview
MMBTH10LT1, MMBTH10−4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM Device Marking: Features http://onsemi.
com • Pb−Free Package May be Available.
The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE COLLECTOR 3 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol VCEO VCBO VEBO Value 25 30 3.
0 Unit Vdc Vdc Vdc 3 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 1) Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 2) Junction and Storage Temperature Range Symbol PD 225 1.
8 RθJA PD 300 2.
4 RθJA TJ, Tstg 417 −55 to +150 mW mW/°C °C/W °C 556 mW mW/°C °C/W Max Unit 1 2 CASE 318 SOT−23 STYLE 6 ORDERING INFORMATION Device MMBTH10LT1 MMBTH10LT1G MMBTH10−4LT1 Package SOT−23 SOT−23 (Pb−Free) SOT−23 Shipping† 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 1.
FR−5 = 1.
0 x 0.
75 x 0.
062 in.
2.
Alumina = 0.
4 x 0.
3 x 0.
024 in.
99.
5% alumina †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2003 1 December, 2003 − Rev.
2 Publication Order Number: MMBTH10LT1/D MMBTH10LT1, MMBTH10−4LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = 1.
0 mAdc, IB = 0) Collector−Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter−Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 25 Vdc, IE = 0) Emitter Cutoff Current (VEB = 2.
0 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 4.
0 mAdc, VCE = 10 Vdc) Collector−Emitter Saturation Voltage (IC = 4.
0 mAdc, IB...


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