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MTN4N65F3

Cystech Electonics
Part Number MTN4N65F3
Manufacturer Cystech Electonics
Description N-Channel Enhancement Mode Power MOSFET
Published Aug 30, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C797F3 Issued Date : 2015.03.06 Revised Date : Page No. : 1/ 11 N-Channel Enhanc...
Datasheet PDF File MTN4N65F3 PDF File

MTN4N65F3
MTN4N65F3

Overview
CYStech Electronics Corp.
Spec.
No.
: C797F3 Issued Date : 2015.
03.
06 Revised Date : Page No.
: 1/ 11 N-Channel Enhancement Mode Power MOSFET MTN4N65F3 BVDSS : 650V RDS(ON) : 3Ω (typ.
) ID : 4A Features • Low On Resistance • Simple Drive Requirement • Fast Switching Characteristic • Pb-free lead plating and RoHS compliant package Applications • Adapter • Switching Mode Power Supply Symbol MTN4N65F3 Outline TO-263 G：Gate D：Drain S：Source G DS Ordering Information Device MTN4N65F3-0-T7-S Package Shipping TO-263 (Pb-free lead plating and RoHS compliant package) 800 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T7 : 800 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTN4N65F3 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C797F3 Issued Date : 2015.
03.
06 Revised Date : Page No.
: 2/ 11 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 1) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Maximum Temperature for Soldering @ Lead at 0.
125 in(0.
318mm) from case for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature *Drain current limited by maximum junction temperature Symbol VDS VGS ID ID IDM EAS IAR EAR dv/dt TL PD Tj, Tstg Note : 1.
Repetitive rating; pulse width limited by maximum junction temperature.
2.
IAS=4A, VDD=50V, L=8mH, RG=25Ω, starting TJ=+25℃.
3.
ISD≤4A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25℃.
Limits 650 ±30 4* 2.
4* 16* 69 4 3.
4 4.
5 300 100 0.
8 -55~+150 Unit V V A A A mJ A mJ V/ns °C W W/°C °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-am...


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