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MTN4N65FP

Cystech Electonics
Part Number MTN4N65FP
Manufacturer Cystech Electonics
Description N-Channel Enhancement Mode Power MOSFET
Published Aug 30, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C797FP Issued Date : 2010.06.09 Revised Date : 2012.01.13 Page No. : 1/ 10 N-Cha...
Datasheet PDF File MTN4N65FP PDF File

MTN4N65FP
MTN4N65FP

Overview
CYStech Electronics Corp.
Spec.
No.
: C797FP Issued Date : 2010.
06.
09 Revised Date : 2012.
01.
13 Page No.
: 1/ 10 N-Channel Enhancement Mode Power MOSFET MTN4N65FP BVDSS : 650V RDS(ON) : 3Ω (typ.
) ID : 4A Description The MTN4N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220FP package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Fast Switching Characteristic • Insulating package, front/back side insulating voltage=2500V(AC) • RoHS compliant package Applications • Adapter • Switching Mode Power Supply Symbol MTN4N65FP Outline TO-220FP (C forming) TO-220FP (S forming) G：Gate D：Drain S：Source MTN4N65FP GDS GDS CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C797FP Issued Date : 2010.
06.
09 Revised Date : 2012.
01.
13 Page No.
: 2/ 10 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 1) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Maximum Temperature for Soldering @ Lead at 0.
125 in(0.
318mm) from case for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature *Drain current limited by maximum junction temperature Symbol VDS VGS ID ID IDM EAS IAR EAR dv/dt TL PD Tj, Tstg Note : 1.
Repetitive rating; pulse width limited by maximum junction temperature.
2.
IAS=4A, VDD=50V, L=8mH, RG=25Ω, starting TJ=+25℃.
3.
ISD≤4A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25℃.
Limits 650 ±30 4* 2.
4* 16* 69 4 3.
4 4.
5 300 34 0.
27 -55~+150 Unit V V A A A mJ A mJ V/ns °C W W/°C °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max ...


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