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CHA2069

United Monolithic Semiconductors
Part Number CHA2069
Manufacturer United Monolithic Semiconductors
Description 18-31GHz Low Noise Amplifier
Published Mar 23, 2005
Detailed Description CHA2069 RoHS COMPLIANT 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-st...
Datasheet PDF File CHA2069 PDF File

CHA2069
CHA2069

Overview
CHA2069 RoHS COMPLIANT 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier.
The circuit is manufactured with a standard HEMT process : 0.
25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is supplied in chip form.
Main Features ¦ Broad band performance 18-31GHz ¦ 2.
5dB noise figure ¦ 22dB gain, ± 1dB gain flatness ¦ Low DC power consumption, 55mA ¦ 20dBm 3rd order intercept point ¦ Chip size : 2,170 x 1,270x 0.
1mm 24 22 20 18 16 14 12 10 8 6 4 2 0 14 16 18 20 22 24 26 28 30 32 34 Frequency ( GHz ) On wafer typical measurements.
Main Charac...


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