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CHA2090

United Monolithic Semiconductors
Part Number CHA2090
Manufacturer United Monolithic Semiconductors
Description 17-24GHz Low Noise Amplifier
Published Mar 23, 2005
Detailed Description CHA2090 RoHS COMPLIANT 17-24GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2090 is a three-st...
Datasheet PDF File CHA2090 PDF File

CHA2090
CHA2090

Overview
CHA2090 RoHS COMPLIANT 17-24GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2090 is a three-stage self-biased wide band monolithic low noise amplifier.
The circuit is manufactured with a standard 0.
25µm gate length pHEMT process, via holes through the substrate, air bridges and electron beam gate lithography.
It is supplied in chip form.
Main Features Broadband performance 17-24GHz 2.
0dB noise figure 23dB gain, ± 1dB gain flatness Low DC power consumption, 55mA Chip size: 2,17 x 1,27 x 0.
1mm 30 12 25 10 20 8 15 6 10 4 52 00 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 Frequency ( GHz ) On wafer typical measurements Main Characteristics Tamb = +25°C, Vd=4.
5V, Pads B,D,E=GND Symbol Parameter Min Typ Max Fop Operating frequency range 17 24 NF Noise figure 2.
0 3.
0 G Gain 19 23 VSWRin Input VSWR 2:1 VSWRout Output VSWR 2:1 ESD Protection : Electrostatic discharge sensitive device.
Observe handling precautions ! Unit GHz dB dB Ref.
: DSCHA20909347-13 Dec 99 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.
A.
S.
Route Départementale 128 - B.
P.
46 - 91401 Orsay Cedex France Tel.
: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2090 17-24GHz Low Noise Amplifier Main Characteristics Tamb = +25°C, Vd=4.
5V, Pads B, D, E=GND Symbol Parameter Min Typ Max Unit Fop Operating frequency range 17 24 GHz NF Noise figure (1) 2 3 dB G Gain (1) 19 23 dB Pout Pout -1dB gain compression 10 dBm VSWRin Input VSWR (1) 2.
0:1 2.
5:1 VSWRout Output VSWR (1) 2.
0:1 2.
5:1 Vdd Positive Drain voltage (2) 4.
5 5.
0 V (1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports.
When the chip is attached with typical 0.
15nH input and output bonding wires, the indicated parameter values should be improved.
(2) See chip biasing option page 7/8.
Absolute Maximum Ratings (1) Tamb = +25°C Symbol Parameter Values Unit Vd Drain bias volta...


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