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BUX11N

Inchange Semiconductor
Part Number BUX11N
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Sep 2, 2016
Detailed Description isc Silicon NPN Power Transistor BUX11N DESCRIPTION ·Low Collector Saturation Voltage ·High Switching Speed ·High Curr...
Datasheet PDF File BUX11N PDF File

BUX11N
BUX11N

Overview
isc Silicon NPN Power Transistor BUX11N DESCRIPTION ·Low Collector Saturation Voltage ·High Switching Speed ·High Current Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor control ·Linear and switching industrial equipment Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCER VCEX VCEO Collector-Base Voltage Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage VBE= -1.
5V Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 220 V 200 V 220 V 160 V 7 V 20 A 25 A 5 A 150 W 200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
17 ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUX11N ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.
8A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A ;IB= 1.
88A VBE(sat) Base-Emitter Saturation Voltage IC= 15A ;IB= 1.
88A ICEO Collector Cutoff Current ICBO Collector-Base Cutoff Current IEBO Emitter Cutoff Current VCE= 130V; IB= 0 VCB=VCBO; IE= 0 VCB=VCBO; IE= 0;TC=125℃ VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 8A; VCE= 2V hFE-2 DC Current Gain IC= 15A; VCE= 4V fT Current-Gain—Bandwidth Product IC= 1A; VCE= 15V, ftest= 10MHz Switching Times ton Turn-on Time IC= 15A; IB1= 1.
88A; VCC= 30V ts Storage Time tf Fall Time IC= 15A; IB1= -IB2= 1.
88A; VCC= 30V MIN TYP.
MAX UNIT 160 V 7 V 0.
6 V 1.
5 V 1.
8 V 1.
5 mA 1.
5 6.
0 mA 1.
0 mA 20 60 10...


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