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BUX12P

Part Number	BUX12P
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Sep 2, 2016
Detailed Description	isc Silicon NPN Power Transistor BUX12P DESCRIPTION ·Low Collector Saturation Voltage ·High Switching Speed ·High Curr...
Datasheet	BUX12P PDF File

Overview

isc Silicon NPN Power Transistor BUX12P DESCRIPTION ·Low Collector Saturation Voltage ·High Switching Speed ·High Current Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching circuits ·Motor control Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO VCEX VCEO Collector-Base Voltage Collector-Emitter Voltage VBE= -1.
5V Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 300 V 300 V 250 V 7 V ...

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