DatasheetsPDF.com

SSF3605S

Silikron Semiconductor
Part Number SSF3605S
Manufacturer Silikron Semiconductor
Description MOSFET
Published Sep 22, 2016
Detailed Description Main Product Characteristics: VDSS RDS(on) -30V 5.1mΩ(typ.) ID -15A SOP-8 Features and Benefits:  Advanced MOSFET...
Datasheet PDF File SSF3605S PDF File

SSF3605S
SSF3605S


Overview
Main Product Characteristics: VDSS RDS(on) -30V 5.
1mΩ(typ.
) ID -15A SOP-8 Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSF3605S D G S Marking and pin Assignment Schematic diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.
1mH Avalanche Current @ L=0.
1mH Operating Junction and Storage Temperature Range Max.
-15 -12.
8 -120 3.
1 -30 ±25 180 60 -55 to +150 Thermal Resistance Symbol RθJA Characterizes Junction-to-ambient (t ≤ 10s) ④ Typ.
— Max.
40 Units A W V V mJ A °C Units ℃/W ©Silikron Semiconductor CO.
,LTD.
2012.
04.
09 www.
silikron.
com Version : 1.
2(preliminary) page 1 of 7 Electrical Characterizes @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance Min.
-30 — — — -1.
4 — — — — — — — — — — — — — Typ.
— 5.
1 6.
3 9.
7 -1.
9 — — — 95 2...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)