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SSF3606

Silikron Semiconductor Co
Part Number SSF3606
Manufacturer Silikron Semiconductor Co
Description MOSFET
Published Mar 6, 2010
Detailed Description SSF3606 www.DataSheet4U.com DESCRIPTION The SSF3606 uses advanced trench technology to provide excellent RDS(ON) and lo...
Datasheet PDF File SSF3606 PDF File

SSF3606
SSF3606

Overview
SSF3606 www.
DataSheet4U.
com DESCRIPTION The SSF3606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .
This device is suitable for use as a load switch or in PWM applications.
G D S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =15A RDS(ON) < 8.
5mΩ @ VGS=4.
5V RDS(ON) < 6mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOP-8 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking SSF3606 Device SSF3606 Device Package SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Limit 30 ±20 15 12.
5 60 2 -55 To 150 Unit V V A A A W ℃ VDS VGS ID(25℃) ID(70℃) IDM PD TJ,TSTG Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 62.
5 ℃/W ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Min 30 Typ Max Unit V ©Silikron Semiconductor CO.
,LTD.
1 http://www.
silikron.
com v1.
1 SSF3606 www.
DataSheet4U.
com Zero Gate Voltage Drain Current Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) IDSS IGSS VDS=30V,VGS=0V VGS=±20V,VDS=0V...


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