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AP28G40GEH

Advanced Power Electronics
Part Number AP28G40GEH
Manufacturer Advanced Power Electronics
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Published Sep 22, 2016
Detailed Description Advanced Power Electronics Corp. ▼ High Input Impedance ▼ High Peak Current Capability ▼ Low Gate Drive ▼ Strobe Flash A...
Datasheet PDF File AP28G40GEH PDF File

AP28G40GEH
AP28G40GEH

Overview
Advanced Power Electronics Corp.
▼ High Input Impedance ▼ High Peak Current Capability ▼ Low Gate Drive ▼ Strobe Flash Applications ▼ RoHS Compliant & Halogen-Free AP28G40GEH/J Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR G CE TO-252(H) VCE ICP G 400V 150A C G C E TO-251(J) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating VCE Collector-Emitter Voltage 400 VGEP Peak Gate-Emitter Voltage ±6 ICP Pulsed Collector Current, VGE @ 2.
5V 150 PD@TA=25℃ Maximum Power Dissipation 1.
1 TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range 150 .
E Units V V A W oC oC Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
IGES Gate-Emitter Leakage Current VGE=+ 6V, VCE=0V -- ICES Collector-Emitter Leakage Current VCE=400V, VGE=0V -- VCE(sat) Collector-Emitter Saturation Voltage VGE=2.
5V, ICP=150A (Pulsed) - 3.
5 VGE(th) Gate Threshold Voltage VCE=VGE, IC=250uA 0.
3 - Qg Total Gate Charge IC=40A - 76 Qge Gate-Emitter Charge VCE=200V -4 Qgc Gate-Collector Charge VGE=4V - 26 td(on) Turn-on Delay Time VCC=320V - 220 tr Rise Time IC=160A - 800 td(off) Turn-off Delay Time RG=10Ω - 1.
6 tf Fall Time VGE=4V - 1.
5 Cies Input Capacitance VGE=0V - 4485 Coes Output Capacitance VCE=30V - 44 Cres Reverse Transfer Capacitance f=1.
0MHz - 40 RthJC Thermal Resistance Junction-Case -- RthJA Thermal Resistance Junction-Ambient -- Max.
+30 25 8 1.
2 130 8240 2 110 Units uA uA V V nC nC nC ns ns µs µs pF pF pF oC/W oC/W Data and specifications subject to change without notice 1 201502253 AP28G40GEH/J IC , Collector Current (A) IC , Collector Current(A) 160 T C =25 o C 120 80 5.
0V 4.
5V 3.
5V 3.
0V V G =2.
5 40 0 02468 V CE , Collector-Emitter Voltage (V) Fig 1.
Typical Output Characteristics IC , Collector Current (A) 100 T C =150 o C 80 60 5.
0 V 4.
5 V 3.
5 V 3 .
0V V G = 2.
5 V 40 ...


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