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AP28G40GEJ

Advanced Power Electronics
Part Number AP28G40GEJ
Manufacturer Advanced Power Electronics
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Published Sep 22, 2016
Detailed Description Advanced Power Electronics Corp. ▼ High Input Impedance ▼ High Peak Current Capability ▼ Low Gate Drive ▼ Strobe Flash A...
Datasheet PDF File AP28G40GEJ PDF File

AP28G40GEJ
AP28G40GEJ

Overview
Advanced Power Electronics Corp.
▼ High Input Impedance ▼ High Peak Current Capability ▼ Low Gate Drive ▼ Strobe Flash Applications ▼ RoHS Compliant & Halogen-Free AP28G40GEH/J Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR G CE TO-252(H) VCE ICP G 400V 150A C G C E TO-251(J) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating VCE Collector-Emitter Voltage 400 VGEP Peak Gate-Emitter Voltage ±6 ICP Pulsed Collector Current, VGE @ 2.
5V 150 PD@TA=25℃ Maximum Power Dissipation 1.
1 TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range 150 .
E Units V V A W oC oC Electrical Characteristics@...


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