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STP4435

Stanson Technology
Part Number STP4435
Manufacturer Stanson Technology
Description MOSFET
Published Sep 25, 2016
Detailed Description STP4435 P Channel Enhancement Mode MOSFET -10A DESCRIPTION STP4435 is the P-Channel logic enhancement mode power field e...
Datasheet PDF File STP4435 PDF File

STP4435
STP4435

Overview
STP4435 P Channel Enhancement Mode MOSFET -10A DESCRIPTION STP4435 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as LCD backlight, notebook computer power management, and other battery powered circuits.
PIN CONFIGURATION SOP-8 FEATURE l -30V/-9.
2A, RDS(ON) =-22mΩ (Typ.
) @VGS =-10V l -30V/-7.
0A, RDS(ON) = 30mΩ @VGS = -4.
5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOP-8 package design PART MARKING SOP-8 Y：Year Code A：Preduce Code B：Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com Copyright © 2007, Stanson Corp.
STP4435 2007.
V1 STP4435 P Channel Enhancement Mode MOSFET -10A ABSOULTE MAXIMUM RATINGS (Ta = ...


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