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STP4441

STANSON
Part Number STP4441
Manufacturer STANSON
Description P-Channel Enhancement Mode MOSFET
Published Sep 3, 2018
Detailed Description STP4441 P Channel Enhancement Mode MOSFET -10A SCRIPTION STP4441 is the P-Channel logic enhancement mode power field e...
Datasheet PDF File STP4441 PDF File

STP4441
STP4441

Overview
STP4441 P Channel Enhancement Mode MOSFET -10A SCRIPTION STP4441 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, noteook power management ane ther battery powered circuits where high-side witching.
PIN CONFIGURATION SOP-8 FEATURE l -60V/-10.
0A, RDS(ON) = 55mΩ (Typ.
) @VGS =-10V l -60V/-5.
0A, RDS(ON) = 73mΩ @VGS = -4.
5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOP-8 package design PART MARKING SOP-8 Y：Year Code A：Date Code B：Wafer Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com .
STP4441 2010.
V1 STP4441 P Channel Enhancement Mode MOSFET -10A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter ...


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