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STP4410

SamHop Microelectronics
Part Number STP4410
Manufacturer SamHop Microelectronics
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Published Jan 19, 2016
Detailed Description STB4410 STP4410Green Product Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transi...
Datasheet PDF File STP4410 PDF File

STP4410
STP4410


Overview
STB4410 STP4410Green Product Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.
0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 100V 75A 7.
0 @ VGS=10V FEATURES Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D G S S TB S E R IE S T O -263(DD-P AK ) G D S S TP S E R IE S TO-220 D G S ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter Limit VDS Drain-Source Voltage VGS Gate-Source Voltage 100 ±20 ID Drain Current-Continuous c TC=25°C TC=70°C 75 63 IDM -Pulsed a c 390 EAS Avalanche Energy d 576 TC=25°C PD Maximum Power Dissipation TC=70°C 75 52.
5 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 175 THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2 62.
5 Units V V A A A mJ W W °C °C/W °C/W Details are subject to change without notice.
1 Dec,26,2014 www.
samhop.
com.
tw STB4410 STP4410 Ver 1.
0 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) 4 Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS=0V , ID=250uA VDS=80V , VGS=0V VGS= ±20V , VDS=0V 100 ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance DYNAMIC CHARACTERISTICS b CISS Input Capacitance COSS CRSS Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS b tD(ON) tr Turn-On DelayTime Rise Time tD(OFF) tf Turn-Off DelayTime Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=VGS , ID=250uA VGS=10V , ID=37.
5A VDS=10V , ID=37.
5A VDS=25V,VGS=0V f=1.
0MHz VDD=50V ID=1A VGS=10V RGEN= 6 ohm VDS=50V,ID=25A,VGS=10V VDS=50V,ID=25A, VGS=10V 2 DRAIN-SOURCE DIODE CHARACTERISTICS VSD Diode Forward Voltage VGS=0V,...



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