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BUW11AW

Inchange Semiconductor
Part Number BUW11AW
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Sep 26, 2016
Detailed Description isc Silicon NPN Power Transistor BUW11AW DESCRIPTION ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variation...
Datasheet PDF File BUW11AW PDF File

BUW11AW
BUW11AW

Overview
isc Silicon NPN Power Transistor BUW11AW DESCRIPTION ·High Voltage ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current 2 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 100 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.
25 ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUW11AW ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER COND...


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