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BUW11AW

NXP
Part Number BUW11AW
Manufacturer NXP
Description Silicon diffused power transistors
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BUW11W; BUW11AW Silicon diffused power transistors Product specification File under ...
Datasheet PDF File BUW11AW PDF File

BUW11AW
BUW11AW

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BUW11W; BUW11AW Silicon diffused power transistors Product specification File under Discrete Semiconductors, SC06 1997 Aug 14 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package.
e BUW11W; BUW11AW APPLICATIONS • Converters • Inverters • Switching regulators • Motor control systems.
MBB008 2 1 3 PINNING PIN 1 2 3 DESCRIPTION base collector; connected to mounting base emitter 1 2 3 MBK117 Fig.
1 Simplified outline (SOT429) and symbol.
QUICK REFERENCE DATA SYMBOL VCESM BUW11W BUW11AW VCEO collector-emitter voltage BUW11W BUW11AW VCEsat IC ICM Ptot tf collector-emitter saturation voltage collector current (DC) collector current (peak value) total power dissipation fall time see Figs 7 and 9 see Figs 2 and 4 see Fig 2 Tmb ≤ 25 °C; see Fig.
3 resistive load; see Figs 11 and 12 open base 400 450 1.
5 5 10 100 0.
8 V V V A A W µ...


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