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AP9980GM

Advanced Power Electronics
Part Number AP9980GM
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Oct 3, 2016
Detailed Description Advanced Power Electronics Corp. AP9980GM RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Ch...
Datasheet PDF File AP9980GM PDF File

AP9980GM
AP9980GM

Overview
Advanced Power Electronics Corp.
AP9980GM RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Single Drive Requirement ▼ Surface Mount Package Description D2 D2 D1 D1 SO-8 G2 S2 G1 S1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness.
BVDSS RDS(ON) ID 80V 52mΩ 4.
6A D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-a Maximum Thermal Resistance, Junction-ambient3 Rating 80 +20 4.
6 2.
9 30 2 -55 to 150 -55 to 150 Value 62.
5 Units V V A A A W ℃ ℃ Unit ℃/W Data and specifications subject to change without notice 1 200808191 AP9980GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=70oC) Gate-Source Leakage Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=0V, ID=1mA VGS=10V, ID=4.
6A VGS=4.
5V, ID=3.
6A VDS=VGS, ID=250uA VDS=10V, ID=4A VDS=80V, VGS=0V VDS=64V ,VGS=0V VGS= +20V ID=4A VDS=64V VGS=4.
5V VDS=40V ID=1A RG=3.
3Ω,VGS=10V RD=40Ω VGS=0V VDS=25V f=1.
0MHz 80 - - V - - 52 mΩ - - 60 mΩ 1 - 3V -7-S - - 1 uA - - 25 uA - - +100 nA - 19 30 nC - 5 - nC - 10 - nC - 11 - ns - 6 - ns - 30 - ns - 16 - ns - 1820 2910 pF - 130...


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