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AM4N60D

Analog Power
Part Number AM4N60D
Manufacturer Analog Power
Description N-Channel MOSFET
Published Oct 7, 2016
Detailed Description Analog Power N-Channel 600-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast s...
Datasheet PDF File AM4N60D PDF File

AM4N60D
AM4N60D


Overview
Analog Power N-Channel 600-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Power Supplies • Motor Drives • Consumer Electronics AM4N60D VDS (V) 600 PRODUCT SUMMARY rDS(on) (Ω) 2 @ VGS = 10V ID (A) 4 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 600 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TC=25°C VGS ID IDM IS ±20 4 16 4 Pulsed Diode Forward Current b Power Dissipation a TC=25°C ISM PD 16 50 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient a Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 40 3 Units °C/W Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM4N60D_1A Analog Power AM4N60D Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage a Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Electrical Characteristics Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Test Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±20 V VDS = 480 V, VGS = 0 V VDS = 480 V, VGS = 0 V, TJ = 55°C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 2 A VDS = 15 V, ID = 2 A IS = 2 A, VGS = 0 V Dynamic b VDS = 100 V, VGS = 5.
5 V, ID = 2 A VDS = 100 V, RL = 50 Ω, ID = 2 A, VGEN = 10 V, RGEN = 6 Ω VDS = 15 V, VGS = 0 V, f = 1 Mhz Min Typ Max Unit 1V ±100 nA 1 uA 10 6A 2Ω 13 S 0.
82 V 8 4.
0 nC 3.
9 13 4 ns 23 6 924 63 pF 2 Notes...


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