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AM4N60B


Part Number AM4N60B
Manufacturer Analog Power
Title N-Channel MOSFET
Description Analog Power N-Channel 600-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical App...
Features
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed Typical Applications:
• Power Supplies
• Motor Drives
• Consumer Electronics AM4N60B PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 600 2 @ VGS = 10V ID (A) 4a ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Par...

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Similar Ai Datasheet

AM4N60D : Analog Power N-Channel 600-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Power Supplies • Motor Drives • Consumer Electronics AM4N60D VDS (V) 600 PRODUCT SUMMARY rDS(on) (Ω) 2 @ VGS = 10V ID (A) 4 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 600 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TC=25°C VGS ID IDM IS ±20 4 16 4 Pulsed Diode Forward Current b Power Dissipation a TC=25°C ISM PD 16 50 Operating Junction and Storage Temperature Range TJ, Tstg -55 to.

AM4N60P : Analog Power N-Channel 600-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Power Supplies • Motor Drives • Consumer Electronics AM4N60P PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 600 2 @ VGS = 10V ID (A) 4a DRAIN connected to TAB ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 600 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a TC=25°C TC=25°C TC=25°C VGS ID IDM IS PD ±20 4 16 4 300 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 .




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