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AM4N60B

Analog Power
Part Number AM4N60B
Manufacturer Analog Power
Description N-Channel MOSFET
Published Oct 7, 2016
Detailed Description Analog Power N-Channel 600-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast s...
Datasheet PDF File AM4N60B PDF File

AM4N60B
AM4N60B


Overview
Analog Power N-Channel 600-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Power Supplies • Motor Drives • Consumer Electronics AM4N60B PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 600 2 @ VGS = 10V ID (A) 4a ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 600 Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a TC=25°C TC=25°C TC=25°C VGS ID IDM IS PD ±20 4 16 4 300 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient c Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 62.
5 0.
5 Units °C/W Notes a.
Package Limited b.
Pulse width limited by maximum junction temperature c.
Surface Mounted on 1” x 1” FR4 Board.
© Preliminary 1 Publication Order Number: DS_AM4N60B_1A Analog Power AM4N60B Electrical Characteristics Parameter Symbol Test Conditions Min Typ Max Unit Static Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA 1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 480 V, VGS = 0 V VDS = 480 V, VGS = 0 V, TJ = 55°C 1 uA 10 On-State Drain Current a ID(on) VDS = 5 V, VGS = 10 V 5 A Drain-Source On-Resistance a rDS(on) VGS = 10 V, ID = 2 A 2Ω Forward Transconductance a gfs VDS = 15 V, ID = 2 A 17 S Diode Forward Voltage a VSD IS = 2 A, VGS = 0 V 0.
82 V Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd VDS = 100 V, VGS = 6 V, ID = 2 A 9 4.
2 nC 3.
8 Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf VDS = 100 V, RL = 50 Ω, ID = 2 A, VGEN = 10 V, RGEN = 6 Ω 12 4 ns 23 5 Input Capacitance Ciss 924 Output Capacitance Coss VDS = 15 V, VGS = 0 V, f = 1 Mhz 62 pF Reverse Trans...



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