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AM4N65R

AP Semiconductor
Part Number AM4N65R
Manufacturer AP Semiconductor
Description 650V 4A Advanced N-Ch Power MOSFET
Published Jul 1, 2019
Detailed Description AM4N65R 650V 4A Advanced N-Ch Power MOSFET FEATURES ■ Low drain-source On resistance : RDS(on) = 2.4Ω (Typ.) ■ Low gat...
Datasheet PDF File AM4N65R PDF File

AM4N65R
AM4N65R

Overview
AM4N65R 650V 4A Advanced N-Ch Power MOSFET FEATURES ■ Low drain-source On resistance : RDS(on) = 2.
4Ω (Typ.
) ■ Low gate charge : Qg = 12nC (Typ.
) ■ Low reverse transfer capacitance : Crss = 12pF (Typ.
) ■ Lower EMI Noise ■ RoHS compliant device ■ 100% avalanche tested Marking Information Row 1 : AP Row 2 : Product Information Row 3 : Date Code - YY : Year Code - WW : Week Code Ordering Information AM4N65RF TO-220F AM4N65RD D S G TO-252 Part No.
AM4N65RF AM4N65RD Package TO-220F TO-252 Packing Tube Tape & Reel Finish Sn Sn Halogen Free Free Packing Unit 5,000ea 2,500ea Maximum Ratings (TC=25 °C, unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC)* Drain current (Pulsed)* Power Dissipation Single pulsed avalanche energy (Note 2) Avalanche current (Repetitive) (Note 1) Repetitive avalanche energy (Note 1) Junction temperature Storage temperature range *Limited only maximum junction temperature Symbol VDSS VGSS TC = 25℃ ID TC = 100℃ IDM PD TO-220F TO-252 EAS IAR EAR TJ Tstg Rating 650 ±30 4 2.
53 16 32 48 173 4 3.
2 150 -55~150 Unit V V A A W mJ A mJ ℃ www.
apsemi.
com REV.
00 1 AM4N65R Thermal Characteristic Characteristic Thermal resistance, junction to case Thermal resistance, junction to ambient Symbol Rth( j-c) Rth( j-a) Rating Max.
3.
9 Max.
62.
5 Electrical Characteristics (TC=25 °C, unless otherwise noted) Unit ℃/W Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance (Note 3) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time (Note 3,4) Rise time (Note 3,4) Turn-off delay time (Note 3,4) Fall time (Note 3,4) Total gate charge (Note 3,4) Gate-source charge (Note 3,4) Gate-drain charge (Note 3,4) Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss Td(on) Tr td(off) tf Qg Qgs Qg Test Condition ID = 250uA, VGS= 0 ID = 250uA, VDS = VGS VDS = 65...


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