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2SA1770

Part Number	2SA1770
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Oct 17, 2016
Detailed Description	isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1770 DESCRIPTION ·High breakdown voltage and large current ...
Datasheet	2SA1770 PDF File

Overview

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1770 DESCRIPTION ·High breakdown voltage and large current capacity ·Small and slim package permitting ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SC4614 APPLICATIONS ·High voltage switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.
5 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ TJ Junction Temperature...

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