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BUL65A

Seme LAB
Part Number BUL65A
Manufacturer Seme LAB
Description HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
Published Oct 24, 2016
Detailed Description SEME LAB MECHANICAL DATA Dimensions in mm 6.40 (0.252) 6.78 (0.267) 5.21 (0.205) 5.46 (0.215) 123 2.18 (0.086) 2.44 (0...
Datasheet PDF File BUL65A PDF File

BUL65A
BUL65A

Overview
SEME LAB MECHANICAL DATA Dimensions in mm 6.
40 (0.
252) 6.
78 (0.
267) 5.
21 (0.
205) 5.
46 (0.
215) 123 2.
18 (0.
086) 2.
44 (0.
096) 0.
84 (0.
033) 0.
94 (0.
037) 1.
09 (0.
043) 1.
30 (0.
051) 5.
97 (0.
235) 6.
22 (0.
245) 0.
76 (0.
030) 1.
14 (0.
045) 0.
64 (0.
025) 0.
89 (0.
035) 8.
89 (0.
350) 9.
78 (0.
385) BUL65A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE • HIGH VOLTAGE • FAST SWITCHING • HIGH ENERGY RATING 2.
31 (0.
091) Typ.
2.
31 (0.
091) Typ.
4.
60 (0.
181) Typ.
0.
46 (0.
018) 0.
61 (0.
024) 1.
04 (0.
041) 1.
14 (0.
045) Pin 1 – Base I-PAK (TO251) Pad 2 – Collector Pad 3 – Emitter FEATURES • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
• Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
• Triple Guard Ring...


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