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BUL66A

Part Number	BUL66A
Manufacturer	Seme LAB
Description	NPN Transistor
Published	Mar 23, 2005
Detailed Description	LAB MECHANICAL DATA Dimensions in mm 6.40 (0.252) 6.78 (0.267) 5.21 (0.205) 5.46 (0.215) SEME BUL66A 2.18 (0.086) 2.4...
Datasheet	BUL66A PDF File

Overview

LAB MECHANICAL DATA Dimensions in mm 6.
40 (0.
252) 6.
78 (0.
267) 5.
21 (0.
205) 5.
46 (0.
215) SEME BUL66A 2.
18 (0.
086) 2.
44 (0.
096) 0.
84 (0.
033) 0.
94 (0.
037) ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications • • • • SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING 1.
09 (0.
043) 1.
30 (0.
051) 5.
97 (0.
235) 6.
22 (0.
245) 1 2 3 0.
76 (0.
030) 1.
14 (0.
045) 0.
64 (0.
025) 0.
89 (0.
035) 8.
89 (0.
350) 9.
78 (0.
385) 2.
31 (0.
091) Typ.
2.
31 (0.
091) Typ.
0.
46 (0.
018) 0.
61 (0.
024) FEATURES • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
Pin 3 – Emitter 4.
60 (0.
181) Typ.
1.
04 (0.
041) 1.
14 (0.
045) I-PAK(TO251) Pin 1 – Base Pin 2 – Collector • Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
• Triple Guard Rings for improve...

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