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BD236

Part Number	BD236
Manufacturer	JCST
Description	PNP Transistor
Published	Oct 24, 2016
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD234/236/238 TRANSISTOR (PNP...
Datasheet	BD236 PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-126 Plastic-Encapsulate Transistors BD234/236/238 TRANSISTOR (PNP) FEATURES Power Dissipation MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO VCEO VEBO IC Collector-Base Voltage BD234 BD236 BD238 Collector-Emitter Voltage BD234 BD236 BD238 Emitter-Base Voltage BD234 BD236 BD238 Collector Current –Continuous -45 -60 -100 -45 -60 -80 -5 -2 V V V A PC Collector Power Dissipation 1.
25 W TJ Junction Temperature Tstg Storage Temperature 150 -55-150 ℃ ℃ TO-126 1.
EMITTER 2.
COLLECTOR 3.
BASE ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency BD234 BD236 BD238 BD234 BD236 BD238 BD234 BD236 BD238 Symbol V(BR)CBO V(BR)CEO V(BR)E...

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