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BD233

Part Number	BD233
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Dec 2, 2016
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor BD233/235/237 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC...
Datasheet	BD233 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD233/235/237 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.
15A ·Complement to Type BD234/236/238 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in 5~10 watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD233 45 VCBO Collector-Base Voltage BD235 60 V BD237 100 BD233 45 VCEO Collector-Emitter Voltage BD235 60 V BD237 80 VCER Collector-Emitter Voltage(RBE= 1kΩ) BD233 45 BD235 60 V BD237 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 0.
5 A 25 W 150 ℃ -65~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark ...

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