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P1260AT

UNIKC
Part Number P1260AT
Manufacturer UNIKC
Description N-Channel MOSFET
Published Feb 7, 2017
Detailed Description P1260AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 0.65Ω @VGS = 10V ID 12A TO-220 A...
Datasheet PDF File P1260AT PDF File

P1260AT
P1260AT

Overview
P1260AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 0.
65Ω @VGS = 10V ID 12A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1, 2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C L = 10mH ID IDM IAS EAS 12 8.
5 48 7.
4 277 Power DissipationA TC = 25 °C TC = 100 °C PD 223 89 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 60V, starting TJ = 25°C SYMBOL RqJC RqJA TYPICAL MAXIMUM 0.
56 62.
5 UNITS °C / W Ver 1.
0 1 2012/4/16 P1260AT N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Note...


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