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GS66506T

Part Number	GS66506T
Manufacturer	GaN Systems
Description	Top cooled 650V enhancement mode GaN transistor
Published	Apr 14, 2017
Detailed Description	GS66506T Top cooled 650V enhancement mode GaN transistor PRELIMINARY DATASHEET Features – 650V enhancement mode power s...
Datasheet	GS66506T PDF File

Overview

GS66506T Top cooled 650V enhancement mode GaN transistor PRELIMINARY DATASHEET Features – 650V enhancement mode power switch – Top cooled configuration – Ultra low FOM Island Technology™ die – Low inductance GaNPX™ package – Reverse current capability – Integral source sense – Dual gate pads for optimal board layout – Zero reverse recovery loss – RoHS 6 compliant Applications – On-board battery chargers – 400V DC-DC conversion – Inverters, UPS, and VFD motor drive – AC-DC power supplies (PFC & primary) – VHF small form factor power adapters – High frequency, high efficiency power conversion top view D TP GG S TP = thermal pad - internally connected to the source (S) and to the substrate.
Absolute Maximum Ratings (Tcase = 25˚C except as noted) Parameters Operating Junction Temperature Storage Temperature Range Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Tcase=25°C) Continuous Drain Current (Tcase=100°C) Pulsed Drain ...

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