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GS66502B

Part Number	GS66502B
Manufacturer	GaN Systems
Description	650V enhancement mode GaN transistor
Published	Apr 14, 2017
Detailed Description	GS66502B, GS66504B 650V enhancement mode GaN transistors PRELIMINARY DATASHEET Features – 650V enhancement mode power s...
Datasheet	GS66502B PDF File

Overview

GS66502B, GS66504B 650V enhancement mode GaN transistors PRELIMINARY DATASHEET Features – 650V enhancement mode power switch – Ultra low FOM Island Technology™ die – Low inductance GaNPX™ package – Reverse current capability – Integral source sense – Zero reverse recovery loss – RoHS 6 compliant Applications – On-board battery chargers – Appliance and motor inverters and IPMs – AC-DC power supplies (PFC & primary) – VHF small form factor power adapters – High frequency, high efficiency power conversion top view D GS Absolute Maximum Ratings (Tcase = 25˚C except as noted) Parameters Operating Junction Temperature Storage Temperature Range Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Tcase=25°C) Continuous Drain Current (Tcase=100°C) Pulsed Drain Current (Tcase=25°C) Thermal Characteristics (Typical values unless otherwise noted) Parameters Thermal Resistance (junction to case) Maximum Soldering Temperature (MSL3 rated) Sy...

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