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GS66508B

Part Number	GS66508B
Manufacturer	GaN Systems
Description	Bottom-side cooled 650V E-mode GaN transistor
Published	Apr 13, 2020
Detailed Description	GS66508B Bottom-side cooled 650 V E-mode GaN transistor Preliminary Datasheet Features • 650 V enhancement mode power s...
Datasheet	GS66508B PDF File

Overview

GS66508B Bottom-side cooled 650 V E-mode GaN transistor Preliminary Datasheet Features • 650 V enhancement mode power switch • Bottom-side cooled configuration • RDS(on) = 50 mΩ • IDS(max) = 30 A • Ultra-low FOM Island Technology® die • Low inductance GaNPX® package • Easy gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • Very high switching frequency (> 100 MHz) • Fast and controllable fall and rise times • Reverse current capability • Zero reverse recovery loss • Small 7.
1 x 8.
5 mm2 PCB footprint • Source Sense (SS) pin for optimized gate drive • RoHS 6 compliant Package Outline Circuit Symbol Applications • High efficiency power conversion • High density power conversion • AC-DC Converters • Bridgeless Totem Pole PFC • ZVS Phase Shifted Full Bridge • Half Bridge topologies • Synchronous Buck or Boost • Uninterruptable Power Supplies • Industrial Motor Drives • Single and 3Φ inverter legs • Solar and Wind Power • Fast Battery Charging • Class D...

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